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    Webinar: Embracing the Shift from DDR3/DDR4 to next-gen Memory
    Webinar: eMMC in Transition
    Webinar: Memory Trends 2025
    Elevator Control with FeRAM
    Robotic control with FeRAM
    Pet Health Trackers & FeRAM
    Air Quality Control with MRAM and FeRAM
    Designing Smart Meters and Edge AI devices with MRAM
    E2 SSD Form Factor: The New Superhero in High-Density Storage
    FeRAM for memory-critical fire & gas suppression systems
    Disconintuation of eMMC: A Guide for Developers and OEMs
    DDR6: The Next Evolution in High-Performance Memory
    SOCAMM: The New Memory on the AI Block
    FeRAM-Enabled Anti-Counterfeit Authentication
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Range of memory components from legacy to emerging memory technologies

Memory Components

Memory semiconductors are essential components in modern electronic devices, enabling data storage and processing across a range of applications, from smartphones to data centers. They are categorized based on functionality, technology, and architecture, with each type serving specific performance and cost requirements. Below is an overview of the primary types of memory semiconductor components. By clicking on the links you will get to a more detailed overview of the types of components in our portfolio:


1. Volatile Memory

Volatile memory requires continuous power to retain data and is used for temporary storage and fast data access. It stores data in capacitors that require periodic refreshing.

Dynamic Random Access Memory (DRAM)

  • High density and cost-effective.
  • We carry the following subtypes: DDR or DDR1, DDR2, DDR3 DDR4, DDR5, LPSDR, LPDDR1, LPDDR2, LPDDR3, LPDDR4, LPDDR4x, LPDDR5, and LPDDR5x.
  • Applications: System memory for computers, servers, and mobile devices.

Graphics Double Data Rate (GDDR) Memory

  • Description: GDDR is a type of DRAM optimized for graphics processing and high-bandwidth applications.
  • Designed for parallel processing with high data transfer rates and low latency.
  • We offer GDDR versions such as GDDR5, GDDR6, and GDDR7.
  • GDDR6X employs PAM4 (Pulse Amplitude Modulation) for even higher bandwidth.
  • Applications: Graphics cards, gaming consoles, AI accelerators, and high-performance computing.

Static Random Access Memory (SRAM)

  • Description: SRAM uses flip-flop circuits to store data without requiring periodic refresh.
  • Faster than DRAM but less dense and more expensive
  • We offer Asynchronous FAST SRAM, Low Power SRAM, Synchronous SRAM, Non-volatile SRAM and Pseudo SRAM
  • Applications: Cache memory in CPUs, GPUs, and networking hardware.


2. Non-Volatile Memory (NVM)

Non-volatile memory retains data without power, making it suitable for long-term storage.


Flash Memory

  • Description: Flash memory stores data using floating-gate transistors.
  • Electrically erasable and reprogrammable.
  • You can find and overview of the NAND and NOR flash technologies that we carry in our section Flash Memory.
  • Applications: Solid-state drives (SSDs), USB drives, memory cards.

Emerging Memory Technologies

Emerging technologies aim to address limitations in speed, density, and scalability.


Magnetoresistive Random Access Memory (MRAM)

  • Description: MRAM is a non-volatile memory technology that stores data using magnetic states instead of electrical charges like DRAM.
  • +10 Year data retention at 89°C
  • Nearly unlimited endurance
  • Applications: Automotive, IoT devices.

Resistive Random Access Memory (ReRAM)

  • Description: ReRAM is a type of non-volatile electronic memory that stores information by changing the electrical resistance of a weakly conductive material.
  • Very low operating current during read operations
  • Unlimited number of read operations
  • Applications: Suitable for applications with high program read frequency such as AI hardware and storage-class memory.

Ferroelectric RAM (FeRAM / FRAM)

  • Description: FeRAM is a random-access memory similar in construction to DRAM but using a ferroelectric layer to achieve non-volatility.
  • Fast read and write at low power consumption
  • No need to erase data before writing
  • Nearly infinite rewrite endurance
  • Applications: Medical devices, secure systems and replacement of EEPROM or SRAM

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MEMPHIS Electronic GmbH

Basler Str. 5

61352 Bad Homburg

Germany

Phone: +49 6172 90350

Email: info@memphis.de

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