Key features:
Other features:
- SSTL_2 compatible inputs
- Auto refresh and self-refresh
- Integrated ECC error correction
On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This simple structure is still how DRAMs are set up today.
Although the technology evolved significantly, the first DRAM generation is still produced and used in industrial and embedded solutions.
True to our commitment to provide legacy as well as the latest memory technologies for industrial and specialty applications, we offer DDR1 DRAMs from the following manufacturers:
256Mb, 512Mb & 1Gb 
200MHz to 400MHz
commercial, industrial and automotive grades
x8, x16
2.5V
TSOP II and BGA