MRAM (Magnetoresistive Random Access Memory) is a non-volatile memory technology that stores data using magnetic states instead of electrical charges like DRAM. MRAM has been developed in the mid-1980s and is considered an emerging memory technology. By combining the high speed of SRAM and the high density of NAND it has the potential to become a universal memory that can be used as code storage, working memory, for data logging or as back-up memory.
We offer MRAM components from Netsol that are based on the Spin-Transfer Torque switching technique which requires less write-current.
