Resistive Random-Access Memory is a type of non-volatile memory that works by changing the resistance across the dielectric solid-sate material often referred to as memristor.

It was first developed in the early 2000s and since then different forms of ReRAM have been introduced, based on different dielectric materials.

ReRAM provides memory density scalability, ultra-low power read performance and full upward compatibility with EEPROM. One of the main advantages of ReRAM over other non-volatile RAM technologies is the ability to scale below 10nm.

This makes ReRAM ideal for battery-powered applications with high program read frequency such as hearing aids, smartwatches or other wearable devices, while it is also attracting attention for its use for next-generation IoT, artificial intelligence, and edge computing applications.

Resistive Random-Access Memory is a type of non-volatile memory that works by changing the resistance across the dielectric solid-sate material often referred to as memristor.

It was first developed in the early 2000s and since then different forms of ReRAM have been introduced, based on different dielectric materials.

ReRAM provides memory density scalability, ultra-low power read performance and full upward compatibility with EEPROM. One of the main advantages of ReRAM over other non-volatile RAM technologies is the ability to scale below 10nm.

This makes ReRAM ideal for battery-powered applications with high program read frequency such as hearing aids, smartwatches or other wearable devices, while it is also attracting attention for its use for next-generation IoT, artificial intelligence, and edge computing applications.

• Nearly unlimited read endurance
• Ultra-low read current: 0,15mA @ 5MHz max 0,7mA @ 10MHZ
• High write endurance: up to 1 million write cycles
• Very small footprint: 2.3mm 11pin WL-CSP