MRAM (Magnetoresistive Random Access Memory) is a non-volatile memory technology that stores data using magnetic states instead of electrical charges like DRAM. MRAM has been developed in the mid-1980s and is considered an emerging memory technology. By combining the high speed of SRAM and the high density of NAND it has the potential to become a universal memory that can be used as code storage, working memory, for data logging or as back-up memory.

We offer MRAM components from Netsol that are based on the Spin-Transfer Torque switching technique which requires less write-current.

MRAM (Magnetoresistive Random Access Memory) is a non-volatile memory technology that stores data using magnetic states instead of electrical charges like DRAM. MRAM has been developed in the mid-1980s and is considered an emerging memory technology. By combining the high speed of SRAM and the high density of NAND it has the potential to become a universal memory that can be used as code storage, working memory, for data logging or as back-up memory.

We offer MRAM components from Netsol that are based on the Spin-Transfer Torque switching technique which requires less write-current.

• 28nm process technology from Samsung Foundry
• Serial Interface (Single / Dual/ Quad SPI) or Parallel Interface options
• Nearly unlimited endurance: 10E14 cycles at -25°C
• Data retention: 10 years @89°C
• Active power of 14mW (read), 27mW (write)

• 28nm process technology from Samsung Foundry
• Serial Interface (Single / Dual/ Quad SPI) or Parallel Interface options
• Nearly unlimited endurance: 10E14 cycles at -25°C
• Data retention: 10 years @89°C
• Active power of 14mW (read), 27mW (write)