MRAM
MRAM (Magnetoresistive Random Access Memory) is a non-volatile memory technology that stores data using magnetic states instead of electrical charges like DRAM. MRAM has been developed in the mid-1980s and is considered an emerging memory technology. By combining the high speed of SRAM and the high density of NAND it has the potential to become a universal memory that can be used as code storage, working memory, for data logging or as back-up memory.
We offer MRAM components from Netsol that are based on the Spin-Transfer Torque switching technique which requires less write-current.
Key features:
1Mb - 64Mb
108Mhz (SPI) / 70ns (PAR)
-40°C ~ 85°C / 0°C ~ 70°C
SPI, Dual-SPI, Quad-SPI, x8, x16
1.8V – 3.3V
FBGA (44 / 48), TSOP2 (44 / 54), 8WSON, 8SOP
Other features:
- 28nm process technology from Samsung Foundry
- Serial Interface (Single / Dual/ Quad SPI) or Parallel Interface options
- Nearly unlimited endurance: 10E14 cycles at -25°C
- Data retention: 10 years @89°C
- Active power of 14mW (read), 27mW (write)
